Abstract
Assuming an approximated effective mass and using Bastard's boundary conditions, we introduce a simplified method which allows the determination of the energy levels forming the sub-band structure of non-symmetrical, non-periodical potential samples. The energy quantification condition allows the determination of the energy levels for electron and hole. The wave functions are easily deduced as well as the energy transition. We have applied this method to both theory and experimental data. Our finding shows a good agreement with previous experimental and theoretical results. The method is useful for any number of semiconductor layers arranged in any random way; thus making it more realistic, simpler and applicable to superlattice analysis and device designs.