Abstract
This work presents a simple method to deposit palladium doped tin oxide (SnO2) thin films using modified plasma enhanced chemical vapor deposition as a function of deposition temperature at a radio frequency plasma power of 150 W. Stannic chloride (SnCl4) was used as precursor and oxygen (O-2, 100 SCCM) (SCCM denotes cubic centimeter per minute at STP) as reactant gas. Palladium hexafluroacetyleacetonate (Pd(C5HF6O2)(2)) was used as a precursor for palladium. Fine granular morphology was observed with tetragonal rutile structure. A peak related to Pd2Sn is observed, whose intensity increases slightly with deposition temperature. Electrical resistivity value decreased from 8.6 to 0.9 m Omega cm as a function of deposition temperature from 400 to 600 degrees C. Photoelectron peaks related to Sn 3d, Sn 3p3, Sn 4d, O 1s, and C 1s were detected with varying intensities as a function of deposition temperature. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3498898]