A study of deep levels in vanadium-doped GaAs grown by OMVPE

Journal article

Peer reviewed

A Bchetnia, A Rebey, J. C Bourgoin and B Eljani

Semiconductor science and technology, Vol.18(6), pp.445-448

01/06/2003

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Electron states

Exact sciences and technology

Iii-v semiconductors

Impurity and defect levels

Physics

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Title: A study of deep levels in vanadium-doped GaAs grown by OMVPE
Creators - without role: A Bchetnia - University of Monastir
A Rebey - University of Monastir
J. C Bourgoin - Physique et Mécanique des Milieux Hétérogènes
B Eljani - University of Monastir
Publication Details: Semiconductor science and technology, Vol.18(6), pp.445-448
Publisher: Institute of Physics
Identifiers: 9928800508331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article