Abstract
A mathematical model of the Green-Naghdi photo-thermoelastic model due to ramp-type heating is presented to study the photo- thermo-elastic waves in a two-dimension semi-conductor material. By using Fourier and Laplace transforms with the eigenvalue scheme, the variables are analytically obtained. A semiconductor media such as silicon is investigated. Numerical outcomes for all the physical quantities are implemented and illustrated graphically. The results show that the ramp-type source has varying degrees of influence on physical quantities. The derived methods are evaluated with numerical outcomes which are applied to the semi-conductor material in simplified geometry. Finally, it can be found that the ramp-type heating source has great effects on the studying fields.