Abstract
The main theme of this work is the synthesis and characterization of SnSe thin film for photovoltaic application. 2-micron Tin Selenide thin film is deposited on clean glass substrate (4cmx4cm) by thermal evaporation technique. The sample is annealed for one hour at a temperature of 350 degrees C. Optical characterization is achieved for the calculation of transmittance, reflection, reflection and absorbance. 1.2 eV band gap is calculated which confirmed the semiconductor nature of thin film. Relatively high resistance (5M Omega) of the sample is calculated using I-V characteristics.