Abstract
Nano-powder was used to prepare both Cu2SnS3 and Cu3SnS4 thin films by thermal evaporation technique under 10(-5) Ton on glass and Si substrates as deposited and annealed at 523 K for 30 minute with thickness 400 +/- 5nm and 350 +/- 5nm respectively. Structural, morphological and Topology properties have been investigated by using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. XRD results showed that all prepared films have amorphous structure Raman spectra analysis found two peaks for all prepared specimens at 521 cm(-1) and 303 cm(-1) which correspond to Si substrate and cubic structure of Cu2SnS3, respectively. Micro Raman images illustrated the area completely covered only with Cu2SnS3 surface crystals for Cu2SnS3 and Cu3SnS4 thin films as deposited, whereas for prepared annealed thin films showed the droplet liquid phase more than as deposited specimens. Morphological results showed the prepared annealed thin films have less porosity with enhanced microstructure compared with that as deposited specimens. AFM images showed the grain size and roughness average decreased for annealed Cu2SnS3 thin film, while increased for annealed Cu3SnS4 thin films, All AFM images exhibit smooth, cover the substrate, regular structure and homogenous surfaces have morphological characterized by tubes shaped grains together in big clusters. All samples as deposited and annealed varied in surface roughness average (0.385 - 1.85) nm, root mean square (0.486-2.1) and average grain sizes in the range of (35.28 - 43.65) nm.