Abstract
A process to obtain photoconductive MoSe2 thin films is described. The films are obtained by annealing a multilayer Mo/Se/Mo...Se/Mo/Se structure evaporated onto a thin Ni layer. The films are stoichiometric and textured with the c axis of the crystallites perpendicular to the plane of the substrate. The films are photoconductive with a photocurrent of about 80 mu A.