Abstract
We investigated the electrical properties of Mg-doped Ga1-xInxN grown on a a-plane template High-hole-concentration p-type Mg-doped Ga1-xInxN films with an InN molar fraction of 0.17 were fabricated on sidewall-epitaxial-lateral overgrown a-plane GaN grown on an r-plane sapphire substrate by MOVPE. Variable-temperature Hall effect measurement showed that a maximum hole concentration of 1.4 x 10(19) cm(-3) for x = 0.17 was reproducibly achieved at room temperature. The activation energy of Mg acceptors in Mg-dope a-plane Ga0.83In0.17N was found to be as low as 48 meV. (C) 2009 WILEY-VCH Verlag GmbH & Co. kGaA, Weinheim