Abstract
In this work, we have interested on the initial growth processes of bismuth on the InAs (001) - beta(2) (2 x 4) and alpha(2) (2 x 4) reconstructed surfaces. First, we have calculated the adsorption energy of single Bi atom at different sites located on InAs (001) the surface. Next, we have studied the structural and the electronic properties of the Bi/InAs(001) system. Finally, we have calculated the chemical potential in the gas phase (mu Bi) for Bi adatom as a function of gas temperature for different beam equivalent pressures (BEP). We have determined the pressure temperature diagrams (p-T) for different considered sites. Our results show that the adsorption-desorption behavior of Bi adatom depends on the growth conditions. We have demonstrated that the Bi atom is adsorbed on both beta(2) (2 x 4) and alpha(2) (2 x 4) at low temperature and at low BEP of Bi. Our obtained results seem to be in agreement with those obtained by molecular beam epitaxy (MBE).