Aging-free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs heterostructures

Journal article

Peer reviewed

S Katsura, Y Sugiyama, O Oda and M Tacano

Applied physics letters, Vol.62(16), pp.1910-1912

19/04/1993

Abstract

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Physics

Solid surfaces and solid-solid interfaces

Surface and interface dynamics and vibrations

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

Thin film structure and morphology

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Title: Aging-free InP substrates ready for molecular beam epitaxial growth of InAlAs/InGaAs heterostructures
Creators - without role: S Katsura - Nippon Mining Co., Ltd, Electronic Materials & Components Research Laboratories, Toda, Saitama, Japan
Y Sugiyama - Nippon Mining Co., Ltd, Electronic Materials & Components Research Laboratories, Toda, Saitama, Japan
O Oda - Nippon Mining Co., Ltd, Electronic Materials & Components Research Laboratories, Toda, Saitama, Japan
M Tacano - Nippon Mining Co., Ltd, Electronic Materials & Components Research Laboratories, Toda, Saitama, Japan
Publication Details: Applied physics letters, Vol.62(16), pp.1910-1912
Publisher: American Institute of Physics
Identifiers: 9920701508331
Academic Unit: King Saud Bin Abdulaziz University for Health Sciences
Language: English
Resource Type: Journal article