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Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)
Journal article   Peer reviewed

Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm(2) V-1 s(-1)

Jeremy Smith, Aneeqa Bashir, George Adamopoulos, John E. Anthony, Donal D. C. Bradley, R. Hamilton, Martin Heeney, Iain McCulloch and Thomas D. Anthopoulos
Advanced materials (Weinheim), Vol.22(32), p.3598
24/08/2010
DOI: https://doi.org/10.1002/adma.201000195
PMID: 20665561

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
An alternative approach for the development of high-performance unipolar and ambipolar thin-film transistors and integrated circuits based on hybrid heterostructures comprising a phase-separated solution processed p-type organic small-molecule:polymer semicondcutor blend and a spray-coated n-type ZnO semiconductor layer is demonstrated.

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