Abstract
Air gap thin-film transistors (TFTs) were fabricated using a solid phase crystallization process. Undoped polycrystalline silicon (polysilicon) was used as the active layer and a highly doped polysilicon bridge was used as the gate, which promotes the air gap. These TFTs have comparable threshold voltage (V/sub T/) and subthreshold slope characteristics to TFTs fabricated using pulsed laser crystallization, and using silicon dioxide as gate insulator. The low value of V/sub T/ is very important for low power consumption. Moreover, the air-gap TFT fabrication process is compatible with low-temperature glass substrate technology, which allows the integration of sensors and electronics circuits.