Abstract
We report on the electrical properties of AlGaN/GaInN heterostructures fabricated with various InN molar fractions from 0 to 0.60 in GaInN on a GaN template, The sheet carrier density of the AlGaN/GaInN heterostructure monotonically increased with increasing InN molar fraction in GaInN, reaching 5.0 x 10(13) cm(-2) at an InN molar fraction of 0.60. The Al0.30Ga0.70N/Ga0.40In0.60N heterostructure exhibited static field-effect transistor (FET) characteristics. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim