Sign in
AlGaN/GaInN/GaN heterostructure field-effect transistor
Journal article   Peer reviewed

AlGaN/GaInN/GaN heterostructure field-effect transistor

Hiromichi Ikki, Yasuhiro Isobe, Daisuke Iida, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Akira Bandoh and Takashi Udagawa
Physica status solidi. A, Applications and materials science, Vol.208(7), pp.1614-1616
07/2011

Abstract

Materials Science Materials Science, Multidisciplinary Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Technology

Metrics

1 Record Views

Details