Abstract
Organic field-effect transistors (OFETs) are one of the current hot topics in the materials science and materials chemistry field. Of similar performance, but cheaper than amor-phous silicon,OFETs are aimed at disposable, mobile, flexible low-duty applications. Memory elements for OFET applications, such as display driver logic or radio frequency identification (RFID) tags are, however, limited: capacitor elements for active matrix display logic are volatile and refreshment is current-intensive. First attempts at non-volatile organic memories involve electrets and capacitors integrated in the gate electrode ("floating gates"). These transistor memories, however, have to be charged at high voltages for seconds, and the memory is not truly permanent (time-scale: minutes). Inorganic permanent single transistor memories using ferroelectrics overcome this for high-quality inorganic electronics, but are not suitable for OFETs due to poor performance of organic semiconductors on them, cost, and incompatibility with flexible substrates, an important advantage of organic transistors.