Abstract
Amide graphene oxide (AGO) has been achieved by functionalization of graphene oxide (GO) through chemical route using 2-aminothiazole. GO and AGO were characterized and compared using Fourier transform infrared spectroscopy, scanning electron microscope, X-ray diffraction, energy dispersive X-ray, and Raman spectroscopy. Gas sensor devices were developed by depositing film of GO/AGO between aluminum electrodes on SiO 2 /Si substrate. The sensing performance of AGO and GO has been investigated in terms of change in conductivity. It has been found experimentally that AGO exhibits significantly better reversible sensing response to hydrogen sulphide (H 2 S) gas in comparison with GO.