Abstract
Herein, the prospect of using amorphous Si1-x Sn x alloys as alternative temperature-sensing active materials in microbolometers is evaluated by studying their temperature-dependent resistive properties along with their infrared optical properties. Si1-x Sn x thin films (200 nm thick), with varying Sn concentrations, are prepared at room temperature by cosputtering from Si and Sn targets using simultaneous radio frequency and DC magnetron sputter deposition. Low beam energy X-ray microanalysis is used to estimate the atomic concentrations of the prepared films. Atomic force microscopy analysis shows an increase in the root-mean-square surface roughness of the prepared Si1-x Sn x thin films, with increasing Sn content. Sheet resistance versus temperature measurements are performed yielding temperature coefficients of resistance of 3.25, 2.65, and 1.72% K-1 at resistivity values of 116.18, 27.36, and 2.34 omega cm for Sn concentrations of 35%, 44%, and 48%, respectively. Infrared ellipsometry measurements are performed to extract the optical properties of the Si1-x Sn x thin films and optical simulations confirm that a Fabry-Perot cavity microbolometer configuration containing an Si1-x Sn x thin film can achieve high absorptance in the 8-12 mu m band. This study shows that Si1-x Sn x alloys are a suitable, simple, and low-cost replacement for thermometer layers used in uncooled infrared microbolometers.