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An Approach for Determining an Equivalent Circuit Model for Traveling-Wave MESFET Design
Journal article   Peer reviewed

An Approach for Determining an Equivalent Circuit Model for Traveling-Wave MESFET Design

M. Kaddour, A. Gharsallah, A. Gharbi and H. Baudrand
Electromagnetics, Vol.24(3), pp.167-180
01/04/2004
DOI: https://doi.org/10.1080/02726340490422852

Abstract

simulation transistor traveling-wave
A rigorous analysis of the field effect transistor MESFET using Green's functions and taking into account the wave propagation phenomenon is developed in the presented study. In this case, an analytical model is given to determine the characteristics of the MESFET, such as the S-parameters and gain. Numerical results are compared with experimental published data with good agreement.

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