Abstract
In the proposed work, the thin films have been effectively synthesized by doping the post-transition metal with rare earth metal (In-Yb
2
O
3
) on a large scale using a low-cost jet nebulizer spray pyrolysis technique at different indium (In) doping concentration (0, 1.5, 2.5, 3.5, and 4.5 wt %) with optimized substrate temperature 550 °C. The structural, morphological and opto-electrical properties are investigated using various characterization techniques. Here, the high-quality single-phase cubic structure film was observed by X-ray diffraction (XRD) analysis. The field emission scanning electron microscope (FESEM) image reveals the change in morphology with indium (In) concentration in Yb
2
O
3
thin films. The elemental composition study approves the presence of Yb, In and O. The transmittance, optical indirect energy gap of In-Yb
2
O
3
films have been analyzed by UV–Vis spectra. DC electrical analysis records an improved conductivity and reduced average activation energy for higher doping content of In-Yb
2
O
3
thin films. Notably, all the diodes shows positive photo conducting properties. Specifically, when the Al/In-Yb
2
O
3
/p-Si Schottky barrier diode fabricated with higher doping concentration such as 4.5 wt. % produces the minimum ideality factor (1.791), maximum barrier height (0.692 eV) and higher photosensitive diodes.