Abstract
•The samples prepared using molten-salt method.•Tetragonal structure with P4/mmm space group is maintained for our compound.•At high temperature, the EIS data demonstrated an almost semi-circle in the complex plane plot just as an almost ideal non-Debye peak shape in the spectroscopic plot.•The IS study revealed the presence of a semiconductor grain and an insulating grain boundary.•The correlated barrier hopping (CBH) model is dominant in the conduction mechanism of our sample as per the temperature-dependent a.c. conductivity measurements.
Ba0.97La0.02Ti0.9Nb0.08O3 (distinguished as BLT0.9Nb0.08) ceramic were prepared via the molten-salt reaction. The pellets were sintering at 800 °C for 24 h. The X-ray diffraction (XRD) exhibits the crystallization of our ceramic sample in the tetragonal structure with P4/mmm space group. The scanning electronic microscope (SEM) analyses shows the growth of grain size was founded 260 nm. SEM defines the formation of the high-density ceramic sample. Impedance, modulus and electrical transport properties of the ceramic have been obtained via the impedance spectroscopy at different frequencies (102–106 Hz) and temperatures (500–600 K). The Nyquist plots exhibits the existence of the effect of inter- and intra- grains in our sample. The electrical transport properties of our polycrystalline can be clarified with the help of charge transfer by hopping process. The complex electrical modulus plot is used to establish the dielectric relaxation. The frequency dependence of conductivity plot follows the universal Jonscher power law. What's more, the dielectric constant decreased with rising frequency. This is allocating to Maxwell-Wagner (M-W) interfacial polarization. All the above considered factors recommend that the ceramic material may be favor as an electronic component of several devices.