Abstract
The techniques of ion backscattering with channeling and X-ray rocking curves have been used to analyze Al
0.88Ga
0.12As/GaAs strained-layer-superlattices (SLS). Detailed information on the depth profiles of strain, composition and crystalline quality were obtained on these structures before and after silicon ion implantation. For implantations with an energy of 200 keV and doses up to 5 × 10
15 cm
−2, no intermixing among GaAs and AlGaAs sublayers was observed by backscattering measurements. However, considerable damage occurred with a dose as low as 7 × 10
12 cm
−2, which extended deeper than the projected range of the implanted ions. Corresponding measurements of strain were also made by X-ray rocking curves. Interpretations of such strain profiles suggest that, in the initial stages of ion implantation, the strain in Al
0.88Ga
0.12As sublayers is released.