Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs

Journal article

Peer reviewed

W. K Cheah, W. J Fan, S. F Yoon, B. S MA, T. K NG, R Liu and A. T. S Wee

Semiconductor science and technology, Vol.21(6), pp.808-812

01/06/2006

Abstract

Condensed matter: electronic structure, electrical, magnetic, and optical properties

Exact sciences and technology

Iii-v semiconductors

Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation

Optical properties of specific thin films

Physics

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Title: Analysis and optimization of the annealing mechanisms in (In)GaAsN on GaAs
Creators - without role: W. K Cheah - Nanyang Technological University
W. J Fan - Nanyang Technological University
S. F Yoon - Nanyang Technological University
B. S MA - Nanyang Technological University
T. K NG - Nanyang Technological University
R Liu - Duke-NUS Medical School
A. T. S Wee - Department of Physics, National University of Singapore, 2 Science Drive 3 Road, Singapore 117542, Singapore
Publication Details: Semiconductor science and technology, Vol.21(6), pp.808-812
Publisher: Institute of Physics
Identifiers: 9943214608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article