Abstract
This report portrays the analysis of Cu doping concentration (%) on PbS thin films prepared by feasible nebulizer spray technique. The doping percentage of Cu was increased from 0% to 8% in steps of 2%. X-ray diffraction study of the films evinces the nature of the films as polycrystalline with simple cubic crystal structure. The calculated crystallite size was varied from 55 to 41 nm on increasing the Cu doping concentration. SEM/AFM studies proclaim that the cubic shaped grains have covered the entire film surface. The shape of grains was amended with respect to the increase in Cu doping concentration. An elevation in band gap from 1.61 eV to 2.10 eV was spotted for the raise in Cu doping concentration from 0% to 6%. The near band edge emission peak at 575 nm was sensed from PL spectra in which the intensity was enhanced. Hall Effect measurement declared the p-type conducting nature for the prepared PbS films. Resistivity and carrier-concentration values are 0.73 × 103 cm and 6.04 × 1013 cm−3 respectively for 6% Cu doped PbS thin films. Efficiency for the solar cell FTO/n-CdS/p-Cu:PbS/Ag structure constructed with 6% Cu doped PbS film is about 0.68%.