Abstract
A mathematical model of Green-Naghdi photothermal theory is given to study the wave propagation in a two-dimensional semiconducting material due to moving heat source. By using the Fourier and Laplace transformations with the eigenvalues method, the physical quantities are obtained analytically. Initially, it is assumed that the medium is at rest and it is subject to a heat source in motion with a constant velocity, which is free of traction. A semiconductor media such as silicon has been studied. The derived method is evaluated with numerical results which are applied to the semiconductor medium in simplified geometry. The influences of the different values of moving heat source speed are discussed for all physical quantities.