Abstract
In the current work, we provide a theoretical analysis of reflectance spectroscopy response during the heteroepitaxy of thin films. UV–Vis–NIR energy range is explored for the control of InGaAs/GaAs heterostructures. Theoretical principles on which reflectance data are based are briefly presented. The influence of physical and optical properties of InGaAs thin layer on temporal and spectral reflectivity behavior is thoroughly detailed. The effect of fundamental growth parameters such as growth rate, substrate temperature, and roughness have been precisely quantified.
•Theoretical analysis of the reflectance spectroscopy responses in the UV–Vis–NIR energy range are performed.•Theoretical principles, on which reflectance data are based, are briefly presented.•Effects of growth parameters on InGaAs/GaAs heterostructure reflectance are discussed.•The RMi is presented as the future key of real-time data treatment.