Abstract
In this work, a theoretical framework is examined when the Moore-Gibson-Thompson (MGT) Model is taken into consideration. The semiconductor material is used during the thermal-elastic and electronic (optical) deformation when the photo-thermoelasticity theory is taken. The governing equations are taken during a modified photo-excited model when the heat conduction equation is represented by the model of Moore-Gibson-Thompson (MGT) during optical transport processes. This model illustrates the conjugation between the plasma, thermal and elastic-mechanical waves propagations under the effect of focused laser beam. Laplace transform method is used with by the eigenvalues approach technique to obtain the analytical solutions of the main physical fields. Some conditions (plasma-thermo-mechanical) are taken on the medium with numerical inversion of the Laplace transforms to observe the complete solutions generally in the space-time domain of the principle fields. The Silicon and Germanium media are utilized as semiconductor examples to achieve the numerical computations. The obtained numerical results are graphically illustrated and discussed according to the stability state theoretically with carrying out the theoretical simulation under the effect of many parameters.