Abstract
An analytical model has been developed to investigate the activation energy profile in Mg-doped p-Al
x
Ga
1−
x
N alloy for the entire range of Al composition. For any Al content, the calculated activation energy quantitatively shows a good agreement with experimental result which has also been confirmed by both Hydrogen atom model and effective Bohr radius model. Through this empirical analysis, a breakthrough is apparent for the hole concentration and sheet resistivity with particular Al concentration. It is found that the hole concentration is < 10
17
cm
−3
while the Al content,
x
> 30% in p-Al
x
Ga
1-
x
N. Moreover, the sheet resistivity is found to be < 1 Ω-cm up to the Al content of 30%. Finally, the temperature-induced changing behavior of hole concentration and sheet resistivity have been explored here. These results could be a good insight for fabricating the AlGaN-based real-world devices for future optoelectronics.