Abstract
3D graphene foam is the main aim of this research work. Graphene foam is synthesized on the Ni-foam by the CVD technique. The graphene foam has been characterized by XRD, FESEM, Raman spectroscopy and BET techniques. The resistance of graphene foam with a variance of temperature has been measured through an LCR meter and has been analyzed with classical and neutrosophic analysis. As a result, it is seen that graphene foam is expressing both conductor and semiconductor electric properties and also it is observed that neutrosophic analysis is more flexible to analyze the resistance of graphene foam.