Abstract
In this paper, we report the effect of annealing time on the properties of copper indium diselenide CuInSe2 films. The CuInSe2 thin films have been grown at room temperature by electrochemical deposition technique using two electrodes system. The as deposited films were annealed under argon atmosphere at 300 degrees C during 15, 30, 45 and 60 min. The structural and morphological properties of the resulting films were characterized respectively by means of x-ray diffraction (XRD) and scanning electron microscopy (SEM). The optical band gap was estimated from transmittance measurements. We have found, that after annealing, all films present CuInSe2 in its chalcopyrite structure and with preferred orientation along (112) direction. The film annealed during 45 min exhibits better crystallinity and excellent optical properties. The SEM pictures show that the elaborated films have a uniform surface morphology with a homogeneity distribution of crystallites, the grain became higher in size with prolongation of annealing time; it lays in the range of 195 to 515 angstrom.