Abstract
We report here the effects of argon annealing on the structural and critical parameters of oxygenated copper oxide system with different oxygen purities (Hp 99.99% and Lp 93%). It is found that the structure of the samples maintains orthorhombic single phase independent of both oxygen purity and annealing. The mean field temperature
T
c
mf
is increased by annealing from 92 to 94 K for Lp sample, but it is decreased from 93 to 90 K for Hp sample. Similar behavior is obtained for crossover temperatures
T
o
. Further, the coherence length and interlayer coupling are decreased by annealing for both samples, and their values are higher for Lp samples than those for Hp samples. The excess conductivity analysis reveals two different exponents corresponding to crossover temperature for each plot: The first exponent is obtained in the normal field region at a temperature range of ln
ε
(0 ≥ ln
ε
≥ − 2), and their values are 1.50, 1.53, 1.62 and 1.47 for both samples, in which the order parameter dimensionality (OPD) is one dimension, while the second exponent is obtained in the mean field region at a temperature range of ln
ε
(− 2 ≥ ln
ε
≥ − 4), and their values are 0.39, 0.59, 0.56 and 0.41 for both samples, in which the OPD is 3D. Although the critical temperatures are decreased by annealing for both samples, the critical fields and critical currents are increased by annealing for both samples and their values are higher for Hp sample than those for Lp sample. Our results are discussed in terms of oxygen vacancies and concentration of carriers which are produced by annealing and oxygen purity for the considered samples.