Abstract
Scalable fabrication of two-dimensional materials-based devices with consistent characteristics remains a significant impediment in the field. Here, we report on as-grown monolayer MoS2 metal-semiconductor-metal photodetectors produced using a CVD process which results in self-contacted two-dimensional material-based devices. The photodetectors show high responsivity (similar to 1 A/W) even at a low drain-source voltage (V-DS) of 1.5V and a maximum responsivity of up to 15 A/W when V-DS = 4 V with an applied gate voltage of 8 V. The response time of the devices is found to be on the order of 1 mu s, an order of magnitude faster than previous reports. These devices demonstrate the potential of this simple, scalable, and reproducible method for creating as-grown two-dimensional materials-based devices with broad implications for basic research and industrial applications. Published by AIP Publishing.