Abstract
Assembly of earth-abundant and cheap kesterite thin films is significant to produce inexpensive photovoltaic cells. Here, uniform, crystalline Cu2CdSnS4 (CCTS4) thin films were deposited on commercial glass substrate by spray pyrolysis method with thickness (215, 246, 328 and 385) at 450 degrees C. The structural, optical, electrical, and photovoltaic studies of the deposited CCTS4 films were tested by different analysis. The various values of structural constants of CCTS4 films were examined with film thickness. The XRD experiments appeared that the CCTS4 films prove a polycrystalline nature and tetragonal shape. The CCTS4 films observed a direct optical transition and decreased with film thickness increased. The thickness 385 nm of CCTS4 thin film was selected to fabricate the Ag/n-Si/CCTS4/Au Hetero-Junction because it exhibits high values of absorption coefficient and optical conductivity. The fabricated CCTS4/n-type Si Hetero-Junction showed efficiency about 4.1%.