Abstract
We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-kappa dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 degrees C. Low gate leakage was maintained for prolonged exposure at 100 degrees C but increased significantly at temperatures > 200 degrees C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim