Abstract
Atmospheric pressure plasma jet has been explored for pre-treatment applications especially in replacing the conventional vacuum plasma cleaning in semiconductor industries. The pre-treatment of plasma is needed to reduce or eliminate adventitious surface contamination on the thin film. This paper shows that the atmospheric pressure plasma jet treatment is highly effective in activating the surface of aluminium (Al) thin film. The image of Al thin film surface topography shows that the treated surface roughness was reduced however the grain size of the particles was unchanged. The XRD pattern of treated Al thin film also remained the same as before of the atmospheric pressure plasma jet treatment. This shows that the atmospheric pressure plasma jet introduce activation layer on the thin film surface without given impact to the thin film crystality.