Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate

Journal article

Peer reviewed

P. C Colter, S. A Hussien, A Dip, M. U Erdogan, W. M Duncan and S. M Bedair

Applied physics letters, Vol.59(12), pp.1440-1442

16/09/1991

Abstract

Cross-disciplinary physics: materials science; rheology

Exact sciences and technology

Materials science

Methods of crystal growth; physics of crystal growth

Physics

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Title: Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate
Creators - without role: P. C Colter - North Carolina State University
S. A Hussien - North Carolina State University
A Dip - North Carolina State University
M. U Erdogan - North Carolina State University
W. M Duncan - North Carolina State University
S. M Bedair - North Carolina State University
Publication Details: Applied physics letters, Vol.59(12), pp.1440-1442
Publisher: American Institute of Physics
Identifiers: 9927320008331
Academic Unit: Princess Nourah bint Abdulrahman University
Language: English
Resource Type: Journal article