Abstract
The Au/Au(NPs) doped SiO2/p-Si/Al heterojunction solar cell was achieved. The interfacial insulator layer of SiO2 was, successfully, grown on p-Si (111) wafer using the thermal evaporating technique. The Au-nanoparticles (NPs in the range of 20–85 nm) were well dispersed on the amorphous matrix structure of SiO2 film using flash evaporation method. The structural morphology of the film was investigated using field emission scanning electron microscopy. Some aspects of impedance spectroscopy of the solar cells were studied and in light of which; Nyquist spectra for the complex impedance of the cells were recorded at various frequency (100 KHz −3 MHz). The radii of the semi-circles of the Nyquist plot decreased with increasing the frequency. The capacitance-voltage (C–V) and conductance-voltage (G-V) characteristics were measured. The heterojunction cell showed the negative-capacitance behavior at certain frequencies. Moreover, the current-voltage (I–V) characteristics in dark and under illumination were also studied from which, the electronic transport mechanisms through the solar cell were evaluated. Some important parameters of the junction, such as the ideality factor, barrier height carrier, series and shunt resistances were extracted from the I–V curves. The photovoltaic behavior of the Au(NPs) doped SiO2/p-Si solar cell was evaluated and showed good performance. The photovoltaic parameters of the fabricated solar cell such as: open circuit voltage, short circuit current, fill factor and conversion efficiency were calculated as 0.46 V, 5.4 mA, 0.68 and 5.28%, respectively.
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•Heterojunction Solar cell, Au/Au(NPs) doped SO2/p-Si/Al, is achieved.•Some aspects of impedance spectroscopy of the solar cell is studied.•The negative capacitance behavior characterized the device at certain frequencies.•The electrical mechanisms of the solar cell as heterojunction is dominated.•Photovoltaic parameters of the cell under illumination is determined.