Abstract
The variation in band gap energy with composition was determined for single crystals of ZnxCd1-xSe at 300 and 90k. Au- ZnxCd1-xSe schotkky (X < 0.5) Diodes were fabricated. Deep level were also investigated in these diodes using photo capacitance, which revealed the presence of two dominant levels with activation energies of 0.55 – 0.6 and 1.14 – 1.16 ev referred to the valence band edge that were seemingly in dependence of the composition.