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Band gap tunning in BN-doped graphene systems with high carrier mobility
Journal article   Peer reviewed

Band gap tunning in BN-doped graphene systems with high carrier mobility

T. P. Kaloni, R. P. Joshi, N. P. Adhikari and U. Schwingenschloegl
Applied physics letters, Vol.104(7)
17/02/2014
DOI: https://doi.org/10.1063/1.4866383

Abstract

Physical Sciences Physics Physics, Applied Science & Technology
Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping levels between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We demonstrate a low effective mass of the charge carriers. (C) 2014 AIP Publishing LLC.

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