Abstract
We have made a systematic investigation of the band diagram calculation of strained and unstrained InxGa1-xAs alloys in order to extract accurate and adapted parameters which are useful to the electronic properties of InxGa1-xAs/GaAs quantum dots. As an application, the 40-band k.p model is used to describe the band offsets as well as the band parameters in the strained InxGa1-xAs/GaAs system. The kappa valence band parameter as well as g* Lande factor depending of the indium concentration were estimated. These results are analyzed and compared with experiment.