Abstract
We report the quantum capacitance of a monolayer graphene device in an external perpendicular magnetic field including the effects of Rashba spin-orbit interaction (SOI). The SOI mixes the spin up and spin down states of neighbouring Landau levels into two (unequally spaced) energy branches. In order to investigate the role of the SOI for the electronic transport, we study the density of states to probe the quantum capacitance of monolayer graphene. SOI effects on the quantum magnetic oscillations (Shubnikov de Haas and de Hass-van Alphen) are deduced from the quantum capacitance. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4732796]