Abstract
In the present work, a novel type of multiwalled carbon nanotubes (MWCNTs):Rhodamine B (Rh.B) nanocomposites were achieved at varying ratios (0–10 wt%). The MWCNTs:Rh.B nanocomposite films are grown on p-Si substrate using the convective self-assembly method. Multi-techniques including X-ray analysis, scanning and transmission electron microscopy were carried out to unravel the structure morphology of nanocomposite films. The analyzed structure of the films reveals that the MWCNTs were collected to display nano-flower and nano-ropes shaped structure dependent on the additive amount of MWCNTs. The fabricated C/MWCNT:Rh.B/p-Si/Al heterostructures devices have been achieved. The cyclic electrical measurements and photoresponse performance for these devices were carried out at various frequencies (10 KHz - 1 MHz) and under different illuminations (20–80 mW/cm2). The electrical characteristics and performances of such devices are strongly dependent on their structural features. The devices exhibited multi-function platforms including resistive and capacitive windows memory, and photo-switching diode depending on the amount of MWCNTs in Rh.B. The microelectronic diode parameters for C/MWCNT3:Rh.B/p-Si/Al device at forward sweeping voltage such as rectification ratio, ideality factor and barrier height were calculated as 100, 1.47 and 0.72 eV, respectively. Whereas their values were changed to 127, 1.39 and 0.76 eV, respectively, at backward sweeping measurement attributed to the hysteresis behavior of I–V characteristic. This study recommends that MWCNT:Rh.B nanocomposite is an excellent potential candidate for non-volatile memory and photo-switching devices.
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•The structural formation of MWCNTs: Rhodamine B nanocomposite films have been prepared and investigated.•Hybrid organic-inorganic heterostructures of C/MWCNT: Rhodamine-B/p-Si/Al devices has been achieved.•The electrical performances of these devices are analyzed and evaluated.•The fabricated devices exhibited bi-functional applications for non-volatile memory and photodiode.