Abstract
In this work, we derive the 16 band strain-dependent k.p Hamiltonian using finite difference method for dilute bismide-nitride compound GaNAsBi-based strained quantum wells (QWs). The effect of the biaxial strain (-0.57 < epsilon < 0.50%) on electronic band structure of GaNAsBi/GaAs double QWs (DQWs) operating at the near-infrared spectrum and telecommunications window (1.3 and 1.55 mu m) are examined. We use the band anti-crossing model, envelop function formalism and Bir-Pikus theory in conjugation with k.p perturbation method to describe the optoelectronics properties (band offsets, absorption coefficient) behavior of the DQWs structures. Results show that the tensile strained GaNAsBi/GaAs DQWs can be used for the detection of 1, 0.95, and 0.80 eV energy range. This device seem be differentiated by higher carrier confinement and optical absorption compared to compressive strained one. The enhancement of spectral response is analyzed by increasing the QWs number and the coupling between them.