Bipolar Resistive Switching in Al/HfO2/In0.53Ga0.47As MIS Structures

M. K. Hota; C. Mukherjee; T. Das; C. K. Maiti

doi:10.1149/2.007301jss

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Bipolar Resistive Switching in Al/HfO2/In0.53Ga0.47As MIS Structures

Journal article

Peer reviewed

Bipolar Resistive Switching in Al/HfO2/In0.53Ga0.47As MIS Structures

M. K. Hota, C. Mukherjee, T. Das and C. K. Maiti

ECS journal of solid state science and technology, Vol.1(6), pp.N149-N152

01/01/2012

DOI: https://doi.org/10.1149/2.007301jss

Abstract

Materials Science

Materials Science, Multidisciplinary

Physical Sciences

Physics

Physics, Applied

Science & Technology

Technology

Reproducible bipolar resistive switching behavior observed in Metal-Insulator-Semiconductor (Al/HfO2/In0.53Ga0.47As) structures is reported. The resistive switching originates from the redox phenomenon at the Al gate electrode which is induced by the migration of the oxygen ions. Low-frequency noise measurement is used to study the current fluctuation mechanisms. Scanning tunneling microscopy results confirm the formation of conducting filaments during the SET process in the devices. (C) 2012 The Electrochemical Society. All rights reserved.

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Title: Bipolar Resistive Switching in Al/HfO2/In0.53Ga0.47As MIS Structures
Creators - without role: M. K. Hota - Indian Institute of Technology Kharagpur
C. Mukherjee - Indian Institute of Technology Kharagpur
T. Das - Indian Institute of Technology Kharagpur
C. K. Maiti - Indian Institute of Technology Kharagpur
Publication Details: ECS journal of solid state science and technology, Vol.1(6), pp.N149-N152
Publisher: Electrochemical Soc Inc
Number of pages: 4
Identifiers: 9942237608331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article