Abstract
In this paper we first review the main experimental results concerning boron diffusion in preamorphised silicon, focusing on the role played by the End Of Range defects. It is then shown that the application of the Ostwald ripening theory to the particular geometry of these defects permits to understand why and how they affect dopant diffusion. Contradictory experimental results can be reconciled if one considers that most of the diffusion enhancement occurs during the nucleation stage of the extended defects, and that the amorphous / crystalline interface is a perfect screen for the diffusion of the self-interstitials.