Abstract
Nowadays, improve the optical properties of chalcogenide materials for optoelectronic applications became an important issue. In this work, amorphous chalcogenide (GeTe4)100(x)In(x)(0 <= x <= 15) thin films systems have been prepared using an electron beam evaporation process. The amorphous state of the as-deposited films as well as the chemical compositions of the constituent elements was investigated using the X-ray diffraction and the energy dispersive x-ray spectroscopy (EDX). The transmission and reflection of the prepared films have been measured in the UV-Vis-NIR spectral range. Whereby, the optical constants of the as-deposited films viz the real and imaginary parts of the refractive indices, n and, k, beside the energy values of the optical band gap, E-g were calculated using Murmann's exact equations. The average of the coordination number, cohesive energy of the bonds and the average heat of atomization were calculated for the investigated system. A correlation between these parameters and the optical band gap was elucidated.