Abstract
This article describes lateral CMOS IMPATT diodes designed, monolithically integrated and fabricated in 0.18 µm CMOS technology. IMPATT diode impedance and avalanche frequency were confirmed in a measurement from 40 MHz to 110 GHz. Avalanche tuning range measured from 24 GHz to 44 GHz with maximum IMPATT negative resistance of 120 Ω at 38 GHz with 28 mA bias current. Furthermore, selection of the process technology and the impact of n-well impurity concentration are discussed. This device showed wide tuning range in the millimetre wave range and with the low cost of the CMOS technology used, these devices appear well suited for use in millimetre-wave applications.