COMPOUND-SOURCE MOLECULAR-BEAM EPITAXY FOR ZUCDSE/ZNSSE/ZNMGSSE LASER STRUCTURE

K Ohkawa; S Yoshii; H Takeishi; A Tsujimura; S Hayashi; T Karasawa; T Mitsuyu

doi:10.1143/JJAP.33.L1673

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COMPOUND-SOURCE MOLECULAR-BEAM EPITAXY FOR ZUCDSE/ZNSSE/ZNMGSSE LASER STRUCTURE

Journal article

Peer reviewed

COMPOUND-SOURCE MOLECULAR-BEAM EPITAXY FOR ZUCDSE/ZNSSE/ZNMGSSE LASER STRUCTURE

K Ohkawa, S Yoshii, H Takeishi, A Tsujimura, S Hayashi, T Karasawa and T Mitsuyu

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Vol.33(12A), pp.L1673-L1675

01/12/1994

DOI: https://doi.org/10.1143/JJAP.33.L1673

Abstract

Physical Sciences

Physics

Physics, Applied

Science & Technology

We have developed compound-source molecular beam epitaxy (CSMBE) for ZnSe-based laser diodes. The CSMBE technique employs compound sources instead of elemental sources, and can reduces the number of growth parameters. Continuous-wave operation at room temperature of ZnCdSe/ZnSSe/ZnMgSSe laser diodes grown by CSMBE has been demonstrated. The threshold current was 68 mA for a gain-guided device 5 mu m wide and 750 mu m long.

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Title: COMPOUND-SOURCE MOLECULAR-BEAM EPITAXY FOR ZUCDSE/ZNSSE/ZNMGSSE LASER STRUCTURE
Creators - without role: K Ohkawa - Central Research Laboratories
S Yoshii - Central Research Laboratories
H Takeishi - Central Research Laboratories
A Tsujimura - Central Research Laboratories
S Hayashi - Central Research Laboratories
T Karasawa - Central Research Laboratories
T Mitsuyu - Central Research Laboratories
Publication Details: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, Vol.33(12A), pp.L1673-L1675
Publisher: Japan Soc Applied Physics
Number of pages: 3
Identifiers: 9941077508331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article