CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

Journal article

Peer reviewed

D Biswas, N Debbar, P Bhattacharya, M Razeghi, M Defour and F Omnes

Applied physics letters, Vol.56(9), pp.833-835

26/02/1990

Abstract

Physical Sciences

Physics

Physics, Applied

Science & Technology

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Title: CONDUCTION-BAND AND VALENCE-BAND OFFSETS IN GAAS/GA0.51IN0.49P SINGLE QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
Creators - without role: D Biswas - University of Michigan–Ann Arbor
N Debbar - University of Michigan–Ann Arbor
P Bhattacharya - University of Michigan–Ann Arbor
M Razeghi - Technicolor
M Defour - Technicolor
F Omnes - Technicolor
Publication Details: Applied physics letters, Vol.56(9), pp.833-835
Publisher: Amer Inst Physics
Number of pages: 3
Identifiers: 9951601808331
Academic Unit: King Saud University
Language: English
Resource Type: Journal article