Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates

Journal article

Peer reviewed

K Barghout and J Chaudhuri

Journal of materials science, Vol.39(18), pp.5817-5823

15/09/2004

Abstract

Condensed matter: structure, mechanical and thermal properties

Exact sciences and technology

Mechanical and acoustical properties

Physical properties of thin films, nonelectronic

Physics

Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)

Thermal stability; thermal effects

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Title: Calculation of residual thermal stress in GaN epitaxial layers grown on technologically important substrates
Creators - without role: K Barghout - Wichita State University
J Chaudhuri - Wichita State University
Publication Details: Journal of materials science, Vol.39(18), pp.5817-5823
Publisher: Springer
Identifiers: 9924976108331
Academic Unit: Prince Mohammad Bin Fahd University
Language: English
Resource Type: Journal article