Abstract
The frequency dependent electrical properties of Ag/
n-CdO/
p-Si structure has been investigated using capacitance–voltage (
C–V) and conductance–voltage (
G/ω–V) characteristics in the frequency range 10
kHz–1
MHz in the room temperature. The increase in capacitance at lower frequencies is observed as a signature of interface states. The presence of the interfaces states (
N
SS
) is also evidenced as a peak in the capacitance–frequency characteristics. Furthermore, the voltage and frequency dependence of series resistance were calculated from the
C–V and
G/ω–V measurements and plotted as functions of voltage and frequency. The distribution profile of
R
S
–V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies. The values of interface state densities and series resistance from capacitance–voltage-frequency (
C–V-f) and conductance–voltage-frequency (
G/ω–V-
f) measurements were obtained in the ranges of 1.44×10
16–7.59×10
12
cm
−2
eV
−1 and 341.49–8.77
Ω, respectively. The obtained results show that the
C–V-f and
G/ω–V-f characteristics confirm that the interface states density (
N
SS
) and series resistance (
R
S
) of the diode are important parameters that strongly influence the electrical parameters in Ag/
n-CdO/
p-Si structures.
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► Nanocluster-CdO thin films were prepared using sol–gel spin coating method. ► Measurements were performed in the frequency range of 10
kHz–1
MHz in the room temperature. ► Frequency dependence of interface states density was obtained using Hill–Coleman method. ► Obtained results show that
C–V and
G/ω–V characteristics strongly depend on the frequency.