Abstract
High-quality InxGa(1-x)N/GaN multi-quantum well (MQW) structures (0.05=x=0.13), are successfully grown on transparent and conductive (-201)-oriented beta-Ga2O3 substrate. Scanning-transmission electron microscopy and secondary ion mass spectrometry (SIMS) show well-defined high quality MQWs, while the In and Ga compositions in the wells and the barriers are estimated by SIMS. Temperature-dependant Photoluminescence (PL) confirms high optical quality with a strong bandedge emission and negligble yellow band. time-resolved PL measurements (via above/below-GaN bandgap excitations) explain carrier dynamics, showing that the radiative recombination is predominant. Our results demonstrate that (-201)-oriented beta-Ga2O3 is a strong candidate as a substrate for III-nitride-based vertical-emitting devices. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.